| PART |
Description |
Maker |
| APT10050JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
|
| APT10086BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT1001RBVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 1000V 11A 1.000 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT1001RSVR APT1001RSVRG |
100% Avalanche Tested
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| STU6NA100 6003 |
N - CHANNEL 1000V - 1.45ohm - 6A - Max220 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 1000V - 1.45 - 6A - Max220 FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10026JN |
POWER MOS IV 1000V 33A 0.26 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
| STU6NA100 |
N - CHANNEL 1000V - 1.45W - 6A - Max220, FAST POWER MOS TRANSISTOR
|
SGS Thomson Microelectronics
|
| APT1001RBN |
LJT 56C 48#20 8#16 PIN RECP
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 1000V 11.0A 1.00 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
